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IXFN38N100Q2 Discrete Semiconductor Modules 38 Amps 1000V 0.25 Rds

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Name: IXFN38N100Q2 Discrete Semiconductor Modules 38 Amps 1000V 025 Rds
Brand: IXYS
Price: 1 USD

Brand Name : IXYS

Model Number : IXFN38N100Q2

Place of Origin : USA

MOQ : 1pcs

Price : Email us for details

Payment Terms : T/T, Western Union

Supply Ability : 1500pcs

Delivery Time : 1day

Packaging Details : Tube

Description : IXFN38N100Q2 Discrete Semiconductor Modules 38 Amps 1000V 0.25 Rds

Stock : 100PCS

Date Code : Newest code

Shipping by : DHL/UPS/Fedex

Condition : New*Original

Warranty : 365days

Lead free : Rohs Compliant

Lead times : Immediately Shipment

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IXFN38N100Q2 Discrete Semiconductor Modules 38 Amps 1000V 0.25 Rds

IXFN38N100Q2 Discrete Semiconductor Modules 38 Amps 1000V 0.25 Rds

Manufacturer:	IXYS
Product Category:	Discrete Semiconductor Modules
RoHS:	Details
Product:	Power MOSFET Modules
Technology:	Si
Vgs - Gate-Source Voltage:	- 30 V, + 30 V
Mounting Style:	Chassis Mount
Package / Case:	SOT-227-4
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Series:	IXFN38N100
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Fall Time:	15 ns
Height:	9.6 mm
Id - Continuous Drain Current:	38 A
Length:	38.23 mm
Number of Channels:	1 Channel
Pd - Power Dissipation:	890 W
Product Type:	Discrete Semiconductor Modules
Rds On - Drain-Source Resistance:	250 mOhms
Rise Time:	28 ns
Subcategory:	Discrete Semiconductor Modules
Tradename:	HiPerFET
Transistor Polarity:	N-Channel
Typical Turn-Off Delay Time:	57 ns
Typical Turn-On Delay Time:	25 ns
Vds - Drain-Source Breakdown Voltage:	1 kV
Width:	25.42 mm
Unit Weight:	1.058219 oz

IXFN38N100Q2 Discrete Semiconductor Modules 38 Amps 1000V 0.25 Rds

Wisdtech Technology Co.,Limited
Tel: +86-755-23606019
Address: Room 1205-1207,Nanguang building,Huafu Road,

Futian District,Shenzhen,Guangdong,China

Laneya
Telephone:+86-13420902155
E-mail:sales@wisdtech.com.cn
Wechat:laneyatao66
WhatsApp:+8613420902155
Skype:sales@wisdtech.com.cn

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